-A A +A
The effect of hydrogen irradiation on the optical properties of GaAs1−xNx/GaAs heterostructures was investigated using photoreflectance and reflectance techniques. Systematic measurements performed on both as-grown and hydrogenated samples for N-concentrations ranging from 0.0% to 3.5% and for H-implanted doses from 3 × 1018 to 6 × 1018 ions/cm2 have shown that (a) the H-induced widening of the energy gap is accompanied by a decrease of the refractive index of the H-treated samples with respect to the as-grown ones, resulting in an index mismatch that can be as large as 2% in the subgap spectral region; and (b) the presence of compressive strain in fully passivated GaAsN determines a decrease of the refractive index even below that of GaAs that can be eliminated via moderate thermal annealing. These findings are promising for the development of heterostructures with planar geometry, in …
American Institute of Physics
Publication date: 
15 Jun 2011

M Geddo, M Patrini, G Guizzetti, M Galli, R Trotta, A Polimeni, M Capizzi, F Martelli, S Rubini

Biblio References: 
Volume: 109 Issue: 12 Pages: 123511
Journal of Applied Physics