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We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 1018/cm3, are acceptable for practical devices with Q factors as high as 4×104.
American Institute of Physics
Publication date: 
16 May 2011

Paolo Cardile, Giorgia Franzò, Roberto Lo Savio, Matteo Galli, Thomas F Krauss, Francesco Priolo, Liam O’Faolain

Biblio References: 
Volume: 98 Issue: 20 Pages: 203506
Applied Physics Letters