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We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- related defects incorporated into crystalline silicon. Hydrogen was incorporated into the device layer of a silicon on insulator (SOI) wafer by two methods: hydrogen plasma treatment and ion implantation. The room temperature PL spectra show two broad PL bands centered at 1300 and 1500 nm wavelengths: the first one relates to implanted defects while the other band mainly relates to the plasma treatment. Structural characterization reveals the presence of nanometric platelets and bubbles and we attribute different features of the emission spectrum to the presence of these different kind of defects. The emission is further enhanced by introducing defects into photonic crystal (PhC) nanocavities. Transmission electron microscopy analyses revealed that the isotropicity of plasma treatment causes the formation of a …
Optical Society of America
Publication date: 
21 Apr 2014

S Boninelli, G Franzò, Paolo Cardile, F Priolo, R Lo Savio, M Galli, A Shakoor, L O’Faolain, TF Krauss, L Vines, BG Svensson

Biblio References: 
Volume: 22 Issue: 8 Pages: 8843-8855
Optics express