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We have investigated the effects of hydrogen implantation temperature on the ion-cut process of InP by examining the correlation between surface blistering and the ion induced damage, hydrogen distribution, and strain. Using Rutherford backscattering spectrometry, elastic recoil detection, and x-ray diffraction, it was found that both the point defects induced by the hydrogen implantation and the in-plane compressive stress were necessary for hydrogen trapping and H-platelet nucleation and growth. The control of implantation temperature is crucial for creating sufficient defects and strain to induce surface blistering or layer exfoliation.
American Institute of Physics
Publication date: 
19 May 2008

Peng Chen, Zengfeng Di, M Nastasi, Elena Bruno, Maria Grazia Grimaldi, N David Theodore, SS Lau

Biblio References: 
Volume: 92 Issue: 20 Pages: 202107
Applied Physics Letters