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The luminescence-quenching processes limiting quantum efficiency in Er-doped silicon nanocluster light-emitting devices are investigated and identified. It is found that carrier injection, while needed to excite Er ions through electron-hole recombination, at the same time produces an efficient nonradiative Auger deexcitation with trapped carriers. This phenomenon is studied in detail and, on the basis of its understanding, we propose device structures in which sequential injection of electrons and holes can improve quantum efficiency by avoiding Auger processes.
American Physical Society
Publication date: 
2 Mar 2006

F Priolo, CD Presti, G Franzò, A Irrera, I Crupi, F Iacona, G Di Stefano, A Piana, D Sanfilippo, PG Fallica

Biblio References: 
Volume: 73 Issue: 11 Pages: 113302
Physical Review B