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An illumination-dependent analysis of silicon nanocrystal p-i-n solar cells is presented within the framework of the constant field approximation. Silicon nanocrystals in silicon carbide were prepared by solid-phase crystallization and contacted with doped a-SixC1−x:H. This paper aims at determining the fundamental transport and recombination properties, i.e., the effective mobility lifetime product, of the nanocrystal layer at device level. Illumination-dependent current-voltage curves are modelled with a voltage-dependent collection function with only two free parameters, and excellent agreement is found between theory and experiment. An effective mobility lifetime product of 10−10 cm2/V is derived and confirmed independently from an alternative method.
American Institute of Physics
Publication date: 
21 Jan 2013

Philipp Löper, Mariaconcetta Canino, Dureid Qazzazie, Manuel Schnabel, Marco Allegrezza, Caterina Summonte, Stefan W Glunz, Stefan Janz, Margit Zacharias

Biblio References: 
Volume: 102 Issue: 3 Pages: 033507
Applied Physics Letters