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In this paper we present a new technology for the fabrication of Single Photon Avalanche Diodes (SPADs) aimed at combining the advantages of thin and thick SPADs. The new detector is manufactured in a thick epitaxial layer designed to improve the Photon Detection Efficiency (PDE) in the red and near-infrared range while maintaining a good timing resolution. Experimental characterization of the new red-enhanced SPAD (RE-SPAD) confirmed a significant improvement of the PDE compared with thin SPADs; for example the PDE at a wavelength of 800 nm has increased from 15% to about 40%. Nevertheless the temporal resolution is still good, with a timing jitter of about 90 ps FWHM. In the same operating conditions the dark count rate is comparable with the one attainable with a thin SPAD (e.g. less than 25 cps for a 50 µm diameter device cooled down to −5°C). Moreover, being planar, the new technology …
Taylor & Francis Group
Publication date: 
10 Oct 2012

Angelo Gulinatti, Ivan Rech, Francesco Panzeri, Corrado Cammi, P Maccagnani, M Ghioni, Sergio Cova

Biblio References: 
Volume: 59 Issue: 17 Pages: 1489-1499
Journal of Modern Optics