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In this work x-cut Lithium Niobate crystals were implanted with 0.5 MeV O ions (nuclear stopping regime), 5 MeV O ions (sub-threshold electronic stopping regime) and 12.5 MeV Ti ions (ion track regime) at the fluences required for the formation of a surface fully disordered layer. The damage depth profiles were determined by RBS-channeling. Wet etching was performed at room temperature in 50% HF:H2O solution. The data indicated an exponential dependence of the etching rate on the damage concentration. Independently of the damage regime, once random level in the RBS-channeling spectra was attained we measured the same etching rate (50–100 nm/s) and the same volume expansion (∼10%) in all samples. These results indicate that the fully disordered layers obtained by electronic damage accumulation have the same chemical properties of those obtained by conventional nuclear damage …
Publication date: 
1 Apr 2008

M Bianconi, F Bergamini, GG Bentini, A Cerutti, M Chiarini, P De Nicola, G Pennestrì

Biblio References: 
Volume: 266 Issue: 8 Pages: 1238-1241
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms