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The deformation induced onto silicon by the formation of Ti self-aligned silicides (salicides) in shallow trench isolation structures has been investigated by the convergent beam electron diffraction technique (CBED) in the transmission electron microscope (TEM). The splitting of the high order Laue zone (HOLZ) lines in the CBED patterns taken in TEM cross sections close to the salicide/silicon interface has been explained assuming that the salicide grains induce a local bending of the lattice planes of the underlying matrix. This bending, which affects in opposite sense the silicon areas below adjacent grains, decreases with the distance from the interface, eventually vanishing at a depth of 300–400nm. The proposed strain field has been implemented into a fully dynamical simulation of the CBED patterns and has proved to be able to reproduce both the asymmetry of the HOLZ line splitting and the associated …
AIP Publishing
Publication date: 
15 Mar 2006

Aldo Armigliato, Alessio Spessot, Roberto Balboni, Alessandro Benedetti, Gianpietro Carnevale, Stefano Frabboni, Gianfranco Mastracchio, Giuseppe Pavia

Biblio References: 
Volume: 99 Issue: 6 Pages: 064504
Journal of applied physics