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We report on the structural and optical characterization of two-dimensional arrays of silicon nanocrystals (SiNCs) suitable for photovoltaic applications. Single and multiple SiNC layers were grown on quartz by low pressure chemical vapor deposition of Si and subsequent thermal oxidation steps. The single SiNC layers consisted of one SiNC layer embedded in two silicon dioxide (SiO2) layers, whereas the multi-layered structure consisted of five SiNC layers of equal thickness separated by SiO2 layers. SiNC layers with thicknesses ranging from 2 to 25 nm were investigated. A thorough structural characterization of the films was carried out by combining grazing incidence x-ray diffraction, x-ray reflectivity, and transmission electron microscopy (TEM). Both XRD and TEM measurements revealed that the SiNC layers were polycrystalline in nature and composed of SiNCs, separated by grain boundaries, with their …
American Institute of Physics
Publication date: 
15 Apr 2012

S Gardelis, AG Nassiopoulou, P Manousiadis, Silvia Milita, A Gkanatsiou, Nikolaos Frangis, Ch B Lioutas

Biblio References: 
Volume: 111 Issue: 8 Pages: 083536
Journal of Applied Physics