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Article PreviewArticle PreviewArticle PreviewIn this paper we study the surface morphology of< 11-20> 4 degree off, silicon terminated, 4H Silicon Carbide (4H-SiC) in terms of growth parameters and post growth argon thermal annealing. We find that out-of-equilibrium conditions favor the reduction of the surface roughness. Furthermore, we find preliminary indications that the same growth parameters that lead to the reduction of the surface roughness promote also a reduction of (1, 3) and (4, 4) stacking faults density.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2012

Massimo Camarda, Andrea Canino, Patrick Fiorenza, Corrado Bongiorno, Andrea Severino, Vito Raineri, Antonino La Magna, Francesco La Via, Marco Mauceri, Giuseppe Abbondanza, Antonino Pecora, Danilo Crippa

Biblio References: 
Volume: 717 Pages: 149-152
Materials Science Forum