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This work reports on the morphological and electrical characteristics of Ni/4H-SiC Schottky contacts, fabricated on epitaxial layers intentionally covered by micrometric size Ge-droplets. Specifically, the Ge-droplets behave as preferential paths for the vertical current conduction, as observed at nanometric scale by conductive atomic force microscopy. As a consequence, the electrical IV characteristics of these Ni contacts revealed the presence of a double-barrier, thus indicating an inhomogeneity in the interface. This behavior was associated to the local Schottky barrier lowering contribution due to the Ge-presence. These results can be useful to explore the possibility of controlling the contact (Schottky or Ohmic) properties by changing the size and the distribution of the surface impurities.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2015

Marilena Vivona, Filippo Giannazzo, Kassem Alassaad, Véronique Soulière, Gabriel Ferro, Fabrizio Roccaforte

Biblio References: 
Volume: 821 Pages: 424-427
Materials Science Forum