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In this paper, some basic aspects related to defects and SiC devices performances are discussed. Our recent work is reviewed and inserted in the international research scenario. In particular, some issues relative to rectifying metal/SiC contacts will be treated in more detail. In fact, establishing a correlation between material defects, processing induced defects and irradiation induced defects with the electrical behaviour of Schottky contacts is extremely important for the future optimization of almost all electronic devices, sensors and particle detectors.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2005

Fabrizio Roccaforte, Salvatore di Franco, Filippo Giannazzo, Francesco La Via, Sebania Libertino, Vito Raineri, Mario Saggio, Edoardo Zanetti

Biblio References: 
Volume: 108 Pages: 663-670
Solid State Phenomena