Metal contacts (Schottky or Ohmic) to p-type wide band gap (WBG) semiconductors SiC and GaN are important for power devices technologies. This work reports on the properties of Ti/Al-based contacts to p-type 4H-SiC and p-type GaN, monitored using different techniques and test-patterns. In particular, in the case of p-type SiC, Ti/Al and Ti/Al/W contacts showed a superior Ohmic behavior after annealing at 900–1100 C (with ρ c≈ 1.5–6× 10− 4 Ωcm 2), attributed to the formation of Ti-and Al-containing phases at the ...