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Epitaxial graphene was grown on the surface of on-axis and off-axis SiC (0001) by solid state graphitization at high temperatures (2000 C) in Ar ambient. The effect of the miscut angle on the lateral uniformity of the few layers of graphene (FLG) was investigated by combined application of micro-Raman spectroscopy and Torsion Resonance Conductive Atomic Force Microscopy, the latter method enabling a quantification of the FLG coverage on SiC with submicrometer lateral resolution. While the on-axis samples result in uniform coverage by thin (~ 3 monolayers) FLG, the coverage for off-axis samples is much less uniform, following closely the step bunching morphology of the SiC surface.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2010

Sushant Sonde, Filippo Giannazzo, Jean Roch Huntzinger, Antoine Tiberj, Mikael Syväjärvi, Rositza Yakimova, Vito Raineri, Jean Camassel

Biblio References: 
Volume: 645 Pages: 607-610
Materials Science Forum