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Article PreviewArticle PreviewArticle PreviewThis paper reports on the electrical characteristics of thermally grown SiO2 on cubic silicon carbide (3C-SiC). The 3C-SiC (111) was grown on Si-face 6H-SiC (0001) on-axis substrates by a non-conventional Vapor-Liquid-Solid (VLS) technique. Scanning probe microscopy techniques, including Atomic Force Microscopy (AFM), Scanning Capacitance Microscopy (SCM) and tunneling AFM (TUNA) were employed to study the morphology, local capacitance and local current variations across the sample surface. This nanoscale investigation allowed monitoring the homogeneity, as well as reliability in terms of dielectric breakdown (BD), of the thermally grown SiO2. In this way it was possible to gain insights into the breakdown related to pre-existing defects (extrinsic breakdown) as well as the actual intrinsic breakdown of the dielectric.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2010

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Patrick Fiorenza, Jean Lorenzzi, Gabriel Ferro, Vito Raineri

Biblio References: 
Volume: 645 Pages: 833-836
Materials Science Forum