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In this work we investigate the promising properties of F in helping the B confinement in pre-amorphized Si, looking into the physical mechanisms acting. We studied also the effect of F on the electrical activity of B-doped junctions in pre-amorphized Si. The carrier dose, measured by four-point probe and Hall effect techniques, lowers because of F, with respect to the sample implanted only with B. To explain the measured B deactivation we employed scanning probe microscopy that allowed to verify a significant F-donor behaviour. Our results clarifies that the physical reason for the lost of holes dose in junctions co-implanted with B and F is not due to a chemical interaction between dopants and F, but simply to a dopant compensation effect.
Publication date: 
2 Oct 2007

G Impellizzeri, S Mirabella, MG Grimaldi, F Priolo, F Giannazzo, V Raineri, E Napolitani, A Carnera

Biblio References: 
Pages: 81-85
2007 15th International Conference on Advanced Thermal Processing of Semiconductors