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we study the surface morphology of homoepitaxially grown 4H silicon carbide in terms of growth rate, miscut direction of the substrate and post growth argon thermal annealings. All the results indicate that the final surface morphology is the result of a competition between energetic reorganization and kinetic randomness. Because in all observed conditions energetic reorganization favors surface ondulations (“step bunching”), out-of-equilibrium conditions are one of the keys to favor the reduction of the surface roughness to values below~ 0.5 nm. We theoretically support these results using kinetics superlattice Monte Carlo simulations (KslMC)
Trans Tech Publications Ltd
Publication date: 
1 Jan 2013

Massimo Camarda, Andrea Canino, Patrick Fiorenza, Andrea Severino, Ruggero Anzalone, Stefania Privitera, Antonino La Magna, Francesco La Via, Carmelo Vecchio, Marco Mauceri, Grazia Litrico, Antonino Pecora, Danilo Crippa

Biblio References: 
Volume: 740 Pages: 229-234
Materials Science Forum