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A novel Monte Carlo kinetic model has been developed and implemented to predict growth rate regimes and defect formation for the homoepitaxial CVD growth of various SiC polytypes over different substrates. The model is an advancement with respect to standard Monte Carlo algorithms, allowing to simulate both epitaxial and defective structures. The model shows two different defects formation mechanisms depending on the off-angle cut of the initial substrate and on the growth rate. The 2D island nucleation represents the limiting process for large terraces, ie small off-angle cuts (4 degrees and below) and low deposition rates (∼ 12 μ m/h and below). Instead, for high deposition rates (∼ 100 μ m/h typical of the SiHCl 3-based processes) the roughness of the step becomes of the order of the terrace width, so that local step bunching occurs, hindering the standard step-flow kinetic. This enhances the creation of …
Publication date: 
1 Mar 2008
Biblio References: 
Volume: 310 Issue: 5 Pages: 971-975
Journal of crystal growth