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The activation mechanism in phosphorous implanted silicon under excimer laser irradiation is investigated. The activation efficiency in the solid phase has been measured in a wide range of irradiation conditions, tuning the laser fluence in the sub-, partial, and total melting regime. Moreover, fixing the fluence, the activation as a function of the shot number has been analyzed. The total active fraction varies by several orders of magnitude and shows a complex trend depending on the process conditions. Our model, based on the interaction between defects and the active/inactive impurities, explains this scenario. In particular, it predicts experimental P active profiles, thus demonstrating that the status of the defect system rules the activation phenomenon, where the coupling between dopant and defect clusters at the early irradiation stage plays a crucial role.
American Institute of Physics
Publication date: 
1 Jun 2011

G Fisicaro, M Italia, V Privitera, G Piccitto, K Huet, J Venturini, A La Magna

Biblio References: 
Volume: 109 Issue: 11 Pages: 113513
Journal of Applied Physics