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Two dimensional maps of the electronic conductance in epitaxial graphene (EG) grown on SiC were obtained by conductive atomic force microscopy (CAFM). The correlation between morphological and electrical maps revealed the local conductance degradation in EG over the SiC substrate steps or at the junction between monolayer (1L) and bilayer (2L) graphene regions. The effect of steps strongly depends on the charge transfer phenomena between the step sidewall and graphene, whereas the resistance increase at 1L/2L junction is a purely quantum mechanical effect, due to the weak coupling between 1L and 2L electron wavefunctions.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2013

Filippo Giannazzo, Ioannis Deretzis, Antonino La Magna, Salvatore di Franco, Nicolò Piluso, Patrick Fiorenza, Fabrizio Roccaforte, Patrick Schmid, Wilfried Lerch, Rositza Yakimova

Biblio References: 
Volume: 740 Pages: 113-116
Materials Science Forum