The electrical characterization of a-Si:H(n)/c-Si(p) structures prepared by three different deposition techniques is provided by the analysis of the dark and light I-V and C-V-F measurements. Obtained is the insight on the interface quality and contacts in the structure. The analysis of C-V-F measurements was supported by AFORS-HET simulation. Results have revealed the presence of the Schottky barrier in the structure deteriorating performance of the solar cells.