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In this letter, the physical effects of the local surface thin thermal oxidation on the current transport in AlGaN∕GaN heterostructures are reported. Current-voltage measurements performed on appropriate test patterns demonstrated that a selective oxidation process at 900°C enables the suppression of the current flow through the two-dimensional electron gas. The electrical insulation was achieved even though structural analysis showed that the formed oxide did not reach the depth of the AlGaN∕GaN heterointerface. The combination of capacitance-voltage measurements with depth-resolved scanning capacitance microscopy enabled to correlate the electrical results to the doping and the compositional stability of the material during oxidation.
American Institute of Physics
Publication date: 
23 Jun 2008

Fabrizio Roccaforte, Filippo Giannazzo, Ferdinando Iucolano, Corrado Bongiorno, Vito Raineri

Biblio References: 
Volume: 92 Issue: 25 Pages: 252101
Applied Physics Letters