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Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron-gases (2DEGs) in close proximity. In this context, vertical devices formed by Gr and semiconductor heterostructures hosting an “ordinary” 2DEG can be also very interesting. In this work, we investigated the vertical current transport in Gr/Al0.25Ga0.75N/GaN heterostructures, where Gr is separated from a high density 2DEG by a ∼24 nm thick AlGaN barrier layer. The current transport from Gr to the buried 2DEG was characterized at nanoscale using conductive atomic force microscopy (CAFM) and scanning …
Royal Society of Chemistry
Publication date: 
1 Jan 2014
Biblio References: 
Volume: 6 Issue: 15 Pages: 8671-8680