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The mechanisms responsible for p-type doping of substrate supported monolayer graphene (Gr) by thermal treatments in oxygen ambient have been investigated by micro-Raman spectroscopy, atomic force microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS), considering commonly employed dielectric substrates, such as SiO2 and Al2O3 thin films grown on Si. While a high p-type doping (∼1013 cm−2) is observed for Gr on SiO2, no significant doping is found for Gr samples on the Al2O3 substrate, suggesting a key role of the Gr/SiO2 interface states in the trapping of oxygen responsible for the Gr p-type doping. Furthermore, we investigated the doping stability of Gr on SiO2 during subsequent thermal treatments in nitrogen (N2), carbon dioxide (CO2), water (H2O) or in vacuum controlled atmospheres. These processes induce only minor effects on the doping of Gr but for H2O and principally affect its …
Publication date: 
1 Oct 2016

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Bruno Pignataro, Michelangelo Scopelliti, Simonpietro Agnello

Biblio References: 
Volume: 107 Pages: 696-704