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The fabrication of highly doped and ultra-shallow junctions in silicon is a very challenging problem for the materials scientist. The activation levels which are targeted are well beyond the solubility limit of current dopants in Si and, ideally, they should not diffuse during the activation annealing. In practice, the situation is even worse and when boron is implanted into silicon excess Si interstitial atoms are generated which enhance boron diffusion and favor the formation of Boron-Silicon Interstitials Clusters (BICs). An elegant approach to overcome these difficulties is to enrich the Si layers where boron will be implanted with vacancies before or during the activation annealing. Spectacular results have been recently brought to the community showing both a significant control over dopant diffusion and an increased activation of boron in such layers. In general, the enrichment of the Si layers with …
Cambridge University Press
Publication date: 
1 Jan 2008

Alain Claverie, Fuccio Cristiano, Mathieu Gavelle, Fabrice Sévérac, Frédéric Cayrel, Daniel Alquier, Wilfried Lerch, Silke Paul, Leonard Rubin, Vito Raineri, Filippo Giannazzo, Hervé Jaouen, Ardechir Pakfar, Aomar Halimaoui, Claude Armand, Nikolay Cherkashim, Olivier Marcelot

Biblio References: 
Volume: 1070
MRS Online Proceedings Library Archive