Nanolaminated Al 2 O 3–HfO 2 and Al 2 O 3/HfO 2 bilayer thin films have been grown by plasma enhanced atomic layer deposition on silicon substrates. The nanolaminated system consists of alternating layers of Al 2 O 3 and HfO 2, while the bilayer system by contrast has been fabricated as a HfO 2 about 15 nm thick film deposited on a Al 2 O 3 15 nm thick film directly grown in contact with the silicon substrate. Both systems have been grown at a low temperature of 300 C and both systems possess 30 nm total ...