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In this work, we report a multi-scale investigation using several nano-, micro and macro-scale techniques of few layer graphene (FLG) sample consisting of large monolayer (ML) and bilayer (BL) areas grown on C-face 4H-SiC (000-1) by high-temperature sublimation. Single 1 × 1 diffraction patterns are observed by micro-low-energy electron diffraction for ML, BL and trilayer graphene with no indication of out-of-plane rotational disorder. A SiOx layer is identified between graphene and SiC by X-ray photoelectron emission spectroscopy and reflectance measurements. The chemical composition of the interface layer changes towards SiO2 and its thickness increases with aging in normal ambient conditions. The formation mechanism of the interface layer is discussed. It is shown by torsion resonance conductive atomic force microscopy that the interface layer causes the formation of non-ideal Schottky contact …
Publication date: 
1 May 2017

Chamseddine Bouhafs, AA Zakharov, Ivan Gueorguiev Ivanov, F Giannazzo, Jens Eriksson, Vallery Stanishev, P Kühne, Tihomir Iakimov, Tino Hofmann, Mathias Schubert, F Roccaforte, Rositsa Yakimova, Vanya Darakchieva

Biblio References: 
Volume: 116 Pages: 722-732