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This letter reports on the temperature behavior of the structural and electrical properties of Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures. While Ohmic contacts formed at 750 °C showed a decreasing temperature behavior of the specific contact resistance ρC, which was explained by a thermionic field emission mechanism, an increasing trend is observed in the contacts formed at 850 °C. In this case, ρC exhibits a “metal-like” behavior, i.e., describable by a T1.8 dependence. The microstructural analysis of the interfacial region allowed to explain the results with the formation of metallic intrusions contacting directly the two dimensional electron gas.
American Institute of Physics
Publication date: 
11 Nov 2013

Ferdinando Iucolano, Giuseppe Greco, Fabrizio Roccaforte

Biblio References: 
Volume: 103 Issue: 20 Pages: 201604
Applied Physics Letters