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Irradiation with high energy (500 keV) C+ ions at fluences from 1 1013 to 1 1014 cm-2 was used to introduce controlled amounts of defects in single layers of graphene deposited on a SiO2 (100 nm)/n+ Si substrate. Scanning Capacitance Spectroscopy (SCS) was used as non-destructive characterization technique to probe the effect of irradiation on the electrical properties of graphene. In particular, a comparative study between the local capacitance of pristine graphene and irradiated graphene is presented, showing that lateral variations in irradiated graphene are distinctly higher. The local quantum capacitance per unit area C’q of graphene was extracted from raw data. While a narrow distribution of C’q values was obtained in pristine graphene, two distinct distributions were obtained in irradiated monolayers, associated to locally damaged and not damaged regions, respectively.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2010

Sushant Sonde, Filippo Giannazzo, Vito Raineri, Salvatore Di Franco, Antonio Marino, Emanuele Rimini

Biblio References: 
Volume: 156 Pages: 305-311
Solid State Phenomena