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The results of a new epitaxial process using an industrial 6x2” wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2> 0.05) and an increase of the growth rate until about 20 µm/h has been measured. No difference has been observed in terms of defects, doping uniformity (average maximum variation 8%) and thickness uniformity (average maximum variation 1.2%) with respect to the standard process without HCl.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2005

Danilo Crippa, Gian Luca Valente, Alfonso Ruggiero, L Neri, Ricardo Reitano, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, G Abbagnale, Alessandro Veneroni, Fabrizio Omarini, LAURA Zamolo, Maurizio Masi, Fabrizio Roccaforte, G Giannazzo, Salvatore di Franco, Francesco La Via

Biblio References: 
Volume: 483 Pages: 67-72
Materials Science Forum