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The growth rate of 4H-SiC epi layers has been increased by a factor 3 (up to 18μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. An optimized process without the addition of HCl is reported for comparison. The Schottky diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600 C, have electrical characteristics comparable with the standard epitaxial process with the advantage of an epitaxial growth rate three times higher.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2006

Francesco La Via, G Galvagno, A Firrincieli, Fabrizio Roccaforte, Salvatore di Franco, Alfonso Ruggiero, Milo Barbera, Ricardo Reitano, Paolo Musumeci, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, F Portuese, Giuseppe Abbondanza, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa

Biblio References: 
Volume: 527 Pages: 163-166
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