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This work reports the study concerning the influence of the preparation conditions on the structure of silicon rich oxide (SRO) deposited by PECVD method by which the structural properties of the film are strictly related. In particular we investigated the role of reactant gases N2O and SiH4 on the total Si concentration, Si excess concentration, Si clustered concentration and size of nanoclusters formed by high annealing temperature. We payed particular attention on the role of the hydrogen and nitrogen during the Si agglomeration.The presence of hydrogen atoms on the as-deposited specimen, confirmed by the Si–H bonds peak on the FTIR analysis, has been directly correlated to the silicon excess concentration in the layer. The silicon, oxygen and nitrogen atomic density has been calculated from RBS analysis. These information were coupled to the ones obtained using methodology based on electron energy loss …
Publication date: 
1 Apr 2007

Liliana Caristia, Giuseppe Nicotra, Corrado Bongiorno, Nicola Costa, Sebastiano Ravesi, Salvo Coffa, Riccardo De Bastiani, Maria Grazia Grimaldi, Corrado Spinella

Biblio References: 
Volume: 47 Issue: 4-5 Pages: 777-780
Microelectronics Reliability