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This paper reviews some of our achievements on the morphological and electrical properties of SiO 2/4H-SiC interfaces in 4H-SiC MOSFETs. In particular, the impact of the SiC surface morphology and of the effects of different post-oxidation-annealing (POA) of the gate oxide on the channel mobility are discussed. For this purpose, a set of standard macroscopic mobility and interface states measurements on 4H-SiC MOS-based devices processed under different conditions have been selected and correlated with a nanoscale characterization of the electrical modification induced in the SiC material by the POA. The practical implications for the devices performances are discussed.
IOP Publishing
Publication date: 
26 Apr 2013
Biblio References: 
Volume: 2 Issue: 8 Pages: N3006
ECS Journal of Solid State Science and Technology