For the incipient post-Si era of digital devices, III-V compounds are mature candidates among n-type active channels as technology booster to increase electron mobility, but–unlike Si–they lack a well-established technology for dielectric gating which may bear aggressive device scaling. Here we propose a viable route to grow gate dielectrics with high permittivity (high-κ) on In 0.53 Ga 0.47 As (001) substrates by means of atomic layer deposition (ALD) by taking advantage from the well-known clean-up effect of the trimethylaluminum (TMA) precursor on the III-V compound surfaces and from a permittivity enhancement due to transition metal doping. To this purpose, Al 2 O 3 pre-conditioning cycles are performed to passivate the surface and Al 2 O 3 cycles are intercalated during the ALD growth of MeO 2 films (Me= Zr, Hf). The resulting Al: MeO 2/In 0.53 Ga 0.47 As heterojunctions are investigated in their structural …