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Thin crystalline films of Gd2O3 are grown on an atomically flat Ge(001) surface by molecular beam epitaxy and are characterized in situ by reflection high energy electron diffraction and x-ray photoelectron spectroscopy, and ex situ by x-ray diffraction (XRD), atomic force microscopy (AFM), and transmission electron microscopy. The first stage of the growth corresponds to a cubic (110) structure, with two equiprobable, 90° rotated, in-plane domains. Increasing the thickness of the films, a phase transition from cubic (110) to monoclinic (100) oriented crystallites is observed which keeps the in-plane domain rotation, as evidenced by XRD and AFM.
American Institute of Physics
Publication date: 
7 May 2007

Alessandro Molle, Claudia Wiemer, Md Nurul Kabir Bhuiyan, Grazia Tallarida, Marco Fanciulli, Giuseppe Pavia

Biblio References: 
Volume: 90 Issue: 19 Pages: 193511
Applied physics letters