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In this work, we report on the microstructural and morphological characterization of III-V semiconductor nanowires (NWs) epitaxially grown on (111)B-GaAs substrates by Au-catalyst assisted metalorganic vapor phase epitaxy. As-grown dense (108-109 cm-2) arrays of few-micron long vertically-aligned (i.e. parallel to the crystallographic axis) GaAs, AlxGa1-xAs and core-shell GaAs-AlxGa1-xAs NWs were investigated, carrying out HRXRD measurements on different (hkl) reflections and by recording reciprocal space maps (RSMs) around the materials (111) reciprocal lattice points (relps). We show that NW diffraction peaks are visible in the RSM by means of characteristic halos. In the case of GaAs NWs, the halo is located at the (111) relp indicating that the NWs are grown along the direction and parallel to the axis of the GaAs substrate. On the contrary, for AlxGa1-xAs NWs or …
Cambridge University Press
Publication date: 
1 Jan 2011

D Altamura, I Miccoli, P Prete, N Lovergine, L Tapfer

Biblio References: 
Volume: 1350
MRS Online Proceedings Library Archive