Type:
Journal
Description:
The inner composition, defect content and morphology of AlGaAs nanowires (NWs) grown on (111)B-GaAs by Au-catalyzed MOVPE is reported. The NWs grow tapered with their [111] axis normal to the substrate. The Raman spectra of single AlGaAs NWs were measured in non-resonant conditions with sub-μ-meter spatial resolution, allowing determination of the Al content. NWs consist of GaAs for TG475°C, namely an AlxGa1-xAs core surrounded by an AlyGa1-yAs (y
Publisher:
Cambridge University Press
Publication date:
1 Jan 2011
Biblio References:
Volume: 1350
Origin:
MRS Online Proceedings Library Archive