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The authors investigated the electrical compensation induced by deep levels introduced in metal organic vapor phase epitaxy grown n+-InGaP∕GaAs epitaxial layers by high temperature Fe implantation. The activation of the Fe2+-related deep levels has been assessed by current-voltage analyses performed at different temperatures. In the framework of the space charge limited current model, they determined the energy location in the gap of the deep levels that control the electrical properties of the semi-insulating epilayers. A donor level which acts as an electron trap located at EC−0.5eV and a Fe-related acceptor level which is responsible for the stable increase of resistivity located at EV+0.72eV were identified.
American Institute of Physics
Publication date: 
30 Apr 2007

Beatrice Fraboni, Erio Piana, Tiziana Cesca, Andrea Gasparotto, Massimo Longo, Roberto Jakomin, Luciano Tarricone

Biblio References: 
Volume: 90 Issue: 18 Pages: 182106
Applied physics letters