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Low-frequency noise (LFN) has been used in order to gain insight into the physical properties of the materials involved in organic thin-film transistors (OTFTs) fabrication, often with contradictory results. Besides the physical origin of noise, contact effects on noise have been a source of concern and discussion. In this paper, we report on accurate LFN measurements in p-type staggered top-gate OTFTs over four decades of channel current, from the subthreshold to the strong accumulation region. The measured spectra follow a clear 1/f behavior attributed to the trapping/detrapping of channel charge carriers into interface and oxide defects, while the influence of noise sources at contacts is found to be negligible. However, contacts affect the measured noise by a nonnegligible differential resistance. Noise data are interpreted in the context of a multitrap correlated mobility fluctuations (CMFs) model, showing that noise …
Publication date: 
28 Jan 2016

Gino Giusi, O Giordano, Graziella Scandurra, S Calvi, G Fortunato, M Rapisarda, L Mariucci, Carmine Ciofi

Biblio References: 
Volume: 63 Issue: 3 Pages: 1239-1245
IEEE Transactions on Electron Devices