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Al 2 O 3 grown by atomic layer deposition could be proposed as a nonactive layer for back end processes in view of the integration of scaled phase change memory devices. In this paper we report on thermal characterization from 50 to 600 C of amorphous Al 2 O 3 thin films grown on thermally oxidized silicon substrate at a temperature of 100 C and capped with a 30 nm thick Pt layer. The effects of low temperature deposition and of a post-deposition rapid thermal annealing process (RTP) on the thermal properties of the films are investigated using a modulated photo-thermal radiometry technique coupled with post-annealing morphological characterizations. Degassing process occurring at high temperature greatly affects the film surface quality, though measurements of the films after RTP show that the thermal conductivity of amorphous Al 2 O 3 increases as a function of …
Publication date: 
1 Nov 2013

Andrea Cappella, Jean‐Luc Battaglia, Vincent Schick, Andrzej Kusiak, Alessio Lamperti, Claudia Wiemer, Bruno Hay

Biblio References: 
Volume: 15 Issue: 11 Pages: 1046-1050
Advanced Engineering Materials