-A A +A
In this work we show a new low-temperature polycrystalline silicon (LTPS) thin film transistor (TFT) fabrication process on polyimide (PI) layers. The PI is spun on Si-wafer used as rigid carrier, thus overcoming difficulties in handling flexible freestanding plastic substrates, eliminating the problem of plastic shrinkage with high temperature processing and allowing the use of standard semiconductor equipment. LTPS TFTs are fabricated according to a conventional non self-aligned process, with source/drain contacts formed by deposition of a highly doped Si-layer and patterned by a selective wet-etching. Laser annealing is performed providing simultaneous dopant activation and crystallization of the active layer. The maximum process temperature is kept below 350 °C. After LTPS TFTs fabrication, the PI layer is mechanically released from the rigid carrier, which can be re-used for a new fabrication process. The …
Publication date: 
1 Mar 2008

A Pecora, L Maiolo, M Cuscunà, D Simeone, A Minotti, L Mariucci, G Fortunato

Biblio References: 
Volume: 52 Issue: 3 Pages: 348-352
Solid-state electronics