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Atomic layer deposition of Al: ZrO 2 films on In 0.53 Ga 0.47 As substrates is shown to be a promising route to boost the oxide permittivity with respect to Al 2 O 3 gate dielectrics and concomitantly take benefit from the reducing effect of the trimethylaluminum precursor on the In 0.53 Ga 0.47 As surface. We demonstrates that increasing the number of initial Al 2 O 3 cycles in the growth sequence can improve the physical quality and the electrical response of the Al: ZrO 2/In 0.53 Ga 0.47 As interface while preserving the overall composition of the oxide.
IOP Publishing
Publication date: 
24 Aug 2011

Alessandro Molle, Luca Lamagna, Claudia Wiemer, Sabina Spiga, Marco Fanciulli, Clement Merckling, Guy Brammertz, Matty Caymax

Biblio References: 
Volume: 4 Issue: 9 Pages: 094103
Applied physics express