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The molecular structure of tris[bis(trimethylsilyl)amido]lutetium, [(Me3Si)2N]3Lu, is investigated. An agostic interaction is found between Lu and the Si atom of the silyl group. The performance of [(Me3Si)2N]3Lu as precursor to deposit Lu silicate layers by atomic layer deposition using either H2O or O3 as oxygen source is studied. Si incorporation in the films is revealed: [(Me3Si)2N]3Lu thermal decomposition and the mentioned agostic interaction contribute both to the phenomenon. [(Me3Si)2N]3Lu thermal decomposition also affects the growth rate of films deposited using H2O. The growth rate of films deposited using O3, especially at growth temperatures < 300 °C, is extremely high, probably because of the hydrogen atoms existing in [(Me3Si)2N]3Lu.
WILEY&#8208;VCH Verlag
Publication date: 
1 Sep 2007

G Scarel, C Wiemer, M Fanciulli, IL Fedushkin, GK Fukin, GA Domrachev, Y Lebedinskii, A Zenkevich, G Pavia

Biblio References: 
Volume: 633 Issue: 11‐12 Pages: 2097-2103
Zeitschrift für anorganische und allgemeine Chemie