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In the last decade, organic thin film transistor (O-TFTs) have attracted considerable interest, thanks to their being a low-cost, low-temperature process that allows TFT fabrication on plastic substrate [1, 2]. Operational and environmental stability is a fundamental feature for O-TFTs applications, but unfortunately, it has been demonstrated that exposure to air is, in general, detrimental to their performance [3, 4]. Indeed, oncurrent reductions, as well as hysteresis in the transfer characteristics of O-TFTs, measured in different ambient conditions, have been reported in the literature [5–10]. Although hysteresis has been observed in the transfer characteristics in vacuum conditions [6], larger hysteresis occurs when devices are measured in air [5, 8], indicating oxygen and/or water absorption in the organic film as the origin of the electrical instability [5]. It has been reported that hysteresis behavior depends on the fabrication process,[7, 10] as well as on gate dielectrics [8] and the hysteresis mechanisms have been ascribed either to charge injection into gate dielectric [7, 11] or to charge trapping in the semiconductor or at the dielectric/semiconductor interface [5, 6, 10]. In this research, in order to identify the main causes of hysteresis, we measured the transfer characteristics of pentacene TFTs in different environmental conditions and with different gases and relative humidities. In addition, the transient drain current has been measured
Korean Physical Society
Publication date: 
1 Jan 2009

L Mariucci, S Cipolloni, D Simeone, M Cuscuna, L Maiolo, A Minotti, A Pecora, A Valletta, G Fortunato

Biblio References: 
Volume: 54 Issue: 1 Pages: 505-509
Journal of the Korean Physical Society