The International Workshop Silicon Carbide in Europe 2020 (SiCE-2020) was originally planned in Catania (Italy) on 4-6 May, 2020. However, due to the Covid-19 emergency, the conference has been postponed and will be held on November 19th, 2020, as special session of the Virtual Conference Automotive 2020 (by AEIT).

The event will be a scientific forum bringing together leading specialists working in different areas of silicon carbide (SiC) technology, both from universities, research centers and industries.

The aim of the workshop is to debate the latest achievements in SiC wafers growth, devices processing and applications, and to analyze their impact on the goals of the industry towards the development and commercialization of devices, modules and production equipment for several applications (automotive, railways transportation, avionics, renewable energies, etc.).

The event is organized in the framework of three running European projects on silicon carbide: Challenge, Reaction and WInSiC4AP.

As coordinator of the Challenge project, and partner of the Reaction and WInSiC4AP projects, CNR-IMM is strongly involved in the organization of this event, together with IUNET, STMicroelectronics, DTSMNS.


SiCE-2020 Technical Program

November 19th, 2020


10:30-12:30   Room II SiCE-2020, Session I, “Materials” Chair Fabrizio ROCCAFORTE, CNR-IMM, Italy

  • Overview of Project “CHALLENGE” (3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices), Francesco La Via CNR-IMM, Italy
  • “Silicon Carbide Improvements from LPE S.p.A.”, Danilo Crippa, LPE, Italy
  • “Epitaxial Growth on Low Off-axis and On-axis SiC Substrates”, Peder Bergman, Linköping University, Sweden
  • “Hetero-epitaxy of 3C-SiC/Si on deeply patterned substrates”, Roberto Bergamaschini, Università di Milano Bicocca, Italy
  • “The process of hetero-epitaxy of 3C-SiC/Si: new developments” Marcin Zielinski, NOVASiC, France
  • “The bulk growth of 3C-SiC: different approaches”, Peter Wellmann, University of Erlanghen, Germany
  • “Interaction of APBs and SFs: experiments and simulations”, Massimo Zimbone, CNR-IMM, Italy
  • “Scanning probe microscopy for silicon carbide technology”, Filippo Giannazzo, CNR-IMM, Italy

14:30-16:30   Room II SiCE-2020, Session II, “Devices and processing”, Chair Susanna REGGIANI, University of Bologna - IUNET, Italy)

  • Overview of Project “WInSiC4AP” (Wide Bandgap Innovative SiC for Advanced Power), Leoluca Liggio, Distretto Tecnologico Micro e Nano Sistemi, Catania, Italy, Antonio Imbruglia, STMicroelectronics, Italy
  • “Processing and first results of 3C-SiC devices”, Mike Jennings, University of Swansea (UK)
  • “Laser annealing for Ohmic contact in 4H-SiC devices”, Clément Berger, University of Tours - GREMAN, France
  • “Study of annealing processes for electrical activation of p and n-type doping implantation on 4H-SiC”, Monia Spera, CNR-IMM, Italy
  • “Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC Layers: comparison of two methodologies”, Roberta Nipoti, CNR-IMM, Italy
  • “Current conduction mechanism in forward and reverse biased WC Schottky contact on 4H-SiC”, Marilena Vivona, CNR-IMM, Italy
  • “Preliminary Evaluation of VTH and RON Drifts in SiC devices”, Marcello Cioni, University of Modena and Reggio Emilia, Italy
  • “3C-SiC MOSFET structure and oxide reliability”, Fan Li, University of Warwick, UK

16:30-18:30   Room II SiCE-2020, Session III, “Reliability and Applications”, Chairs Antonio IMBRUGLIA, Angelo MESSINA, STMicroelectronics, Italy)

  • Overview of Project “REACTION” (first and euRopEAn siC eighT Inches pilOt line”, Angelo Messina, STMicroelectronics, Italy
  • “Reliability issues in 4H-SiC MOSFETs: impact of oxide traps and threading dislocations”, Patrick Fiorenza, CNR-IMM, Italy
  • “Reliability assessment trough mathematical model of SIC MOSFET”, Salvatore Patanè, University of Messina, Italy
  • “Simulation of thermal effects in 4H-SiC MOSFETs”, Daniela Cavallaro, STMicroelectronics, Italy
  • “Experimental tests and EMI characterization on a SiC switching device”, Filippo Pellitteri, University of Palermo, Italy
  • “Electrothermal Circuit Model of SiC Power MOSFET Based on Neural Network”, Ales Chvala,SUT, Bratislava, Slovakia
  • “SiC Based 15kW DC-DC Converter Development as an outcome of the first and euRopEAn siC eigTh Inches pilOt line - the ECSEL-JU”, Tomasz Bieniek,IET, Poland
  • “Recent advances in packaging technology for SiC power devices”, Jacques Favre, APSI3D, France


SiCE-2020 Organizing Committee

 Salvatore Frisella (DTSMNS, Italy)

 Antonio Imbruglia (STMicroelectronics, Italy)

 Francesco La Via (CNR-IMM, Italy)

 Leoluca Liggio (DTSMNS, Italy)

 Angelo Messina (STMicroelectronics, Italy)

 Susanna Reggiani (University of Bologna - IUNET, Italy)

 Fabrizio Roccaforte (CNR-IMM, Italy)



Scientific Committee

Daniel Alquier (University of Tours, France)

Tomasz Bieniek (ITE, Poland)

Michele Calabretta (STMicroelectronics, Italy)

Danilo Crippa (LPE, Italy)

Ludovic Devidal (Valeo, France)

Marius Enachescu (UPB, Romania)

Patrick Fiorenza (CNR-IMM, Italy)

Martin Haug (Wuerth, Germany)

Antonio Imbruglia (STMicroelectronics, Italy)

Mike Jennings (University of Swansea, UK)

Antonino La Magna (CNR-IMM, Italy)

Francesco La Via (CNR-IMM, Italy)

Gaudenzio Meneghesso (University of Padua - IUNET, Italy)

Angelo Messina (STMicroelectronics, Italy)

Jean-François Michaud (University of Tours, France)

Susanna Reggiani (University of Bologna - IUNET, Italy)

Fabrizio Roccaforte (CNR-IMM, Italy)

Mario Saggio (STMicroelectronics, Italy)

Vincenzo Vinciguerra (STMicroelectronics, Italy)

Peter Wellmann (University of Erlangen, Germany)

Marcin Zielienski (Novasic, France)